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BFP640ESD
Robust High Performance Low Noise Bipolar RF Transistor
Data Sheet
Revision 1.0, 2010-06-29
RF & Protection Devices
Edition 2010-06-29 Published by Infineon Technologies AG 81726 Munich, Germany (c) 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
BFP640ESD
BFP640ESD, Robust High Performance Low Noise Bipolar RF Transistor Revision History: 2010-06-29, Revision 1.0 Previous Revision: Page Subjects (major changes since last revision)
Trademarks of Infineon Technologies AG BlueMoonTM, COMNEONTM, C166TM, CROSSAVETM, CanPAKTM, CIPOSTM, CoolMOSTM, CoolSETTM, CORECONTROLTM, DAVETM, EasyPIMTM, EconoBRIDGETM, EconoDUALTM, EconoPACKTM, EconoPIMTM, EiceDRIVERTM, EUPECTM, FCOSTM, HITFETTM, HybridPACKTM, ISOFACETM, IRFTM, IsoPACKTM, MIPAQTM, ModSTACKTM, my-dTM, NovalithICTM, OmniTuneTM, OptiMOSTM, ORIGATM, PROFETTM, PRO-SILTM, PRIMARIONTM, PrimePACKTM, RASICTM, ReverSaveTM, SatRICTM, SensoNorTM, SIEGETTM, SINDRIONTM, SMARTiTM, SmartLEWISTM, TEMPFETTM, thinQ!TM, TriCoreTM, TRENCHSTOPTM, X-GOLDTM, XMMTM, X-PMUTM, XPOSYSTM. Other Trademarks Advance Design SystemTM (ADS) of Agilent Technologies, AMBATM, ARMTM, MULTI-ICETM, PRIMECELLTM, REALVIEWTM, THUMBTM of ARM Limited, UK. AUTOSARTM is licensed by AUTOSAR development partnership. BluetoothTM of Bluetooth SIG Inc. CAT-iqTM of DECT Forum. COLOSSUSTM, FirstGPSTM of Trimble Navigation Ltd. EMVTM of EMVCo, LLC (Visa Holdings Inc.). EPCOSTM of Epcos AG. FLEXGOTM of Microsoft Corporation. FlexRayTM is licensed by FlexRay Consortium. HYPERTERMINALTM of Hilgraeve Incorporated. IECTM of Commission Electrotechnique Internationale. IrDATM of Infrared Data Association Corporation. ISOTM of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLABTM of MathWorks, Inc. MAXIMTM of Maxim Integrated Products, Inc. MICROTECTM, NUCLEUSTM of Mentor Graphics Corporation. MifareTM of NXP. MIPITM of MIPI Alliance, Inc. MIPSTM of MIPS Technologies, Inc., USA. muRataTM of MURATA MANUFACTURING CO., MICROWAVE OFFICETM (MWO) of Applied Wave Research Inc., OmniVisionTM of OmniVision Technologies, Inc. OpenwaveTM Openwave Systems Inc. RED HATTM Red Hat, Inc. RFMDTM RF Micro Devices, Inc. SIRIUSTM of Sirius Sattelite Radio Inc. SOLARISTM of Sun Microsystems, Inc. SPANSIONTM of Spansion LLC Ltd. SymbianTM of Symbian Software Limited. TAIYO YUDENTM of Taiyo Yuden Co. TEAKLITETM of CEVA, Inc. TEKTRONIXTM of Tektronix Inc. TOKOTM of TOKO KABUSHIKI KAISHA TA. UNIXTM of X/Open Company Limited. VERILOGTM, PALLADIUMTM of Cadence Design Systems, Inc. VLYNQTM of Texas Instruments Incorporated. VXWORKSTM, WIND RIVERTM of WIND RIVER SYSTEMS, INC. ZETEXTM of Diodes Zetex Limited. Last Trademarks Update 2010-03-22
Data Sheet
3
Revision 1.0, 2010-06-29
BFP640ESD
Table of Contents
Table of Contents
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 List of Figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 List of Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 1 2 3 4 5 5.1 5.2 5.3 5.4 5.5 6 7 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Product Brief . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Thermal Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . General AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Frequency Dependent AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Characteristic DC Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Characteristic AC Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 12 12 13 18 21
Simulation Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 Package Information SOT343 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Data Sheet
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BFP640ESD
List of Figures
List of Figures
Figure 1 Figure 2 Figure 3 Figure 4 Figure 5 Figure 6 Figure 7 Figure 8 Figure 9 Figure 10 Figure 11 Figure 12 Figure 13 Figure 14 Figure 15 Figure 16 Figure 17 Figure 18 Figure 19 Figure 20 Figure 21 Figure 22 Figure 23 Total Power Dissipation Ptot = f (Ts) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BFP640ESD Testing Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Collector Current vs. Collector Emitter Voltage IC = f (VCE), IB = Parameter . . . . . . . . . . . . . . . . . DC Current Gain hFE = f (IC), VCE = 3 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Collector Current vs. Base Emitter Voltage IC = f (VBE), VCE = 2 V. . . . . . . . . . . . . . . . . . . . . . . . . Base Current vs. Base Emitter Forward Voltage IB = f (VBE), VCE = 2 V . . . . . . . . . . . . . . . . . . . . Base Current vs. Base Emitter Reverse Voltage IB = f (VEB), VCE = 2 V . . . . . . . . . . . . . . . . . . . . Transition Frequency fT = f (IC), f = 1 GHz, VCE = Parameter. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3rd Order Intercept Point OIP3 = f (IC), ZS = ZL= 50 , VCE, f = Parameters. . . . . . . . . . . . . . . . . Collector Base Capacitance CCB = f (VCB), f = 1 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Gain Gma, Gms, IS21I = f (f), VCE = 3 V, IC = 30 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Maximum Power Gain Gmax = f (IC), VCE = 3 V, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . . Maximum Power Gain Gmax = f (VCE), IC = 30 mA, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . Input Matching S11 = f ( f ), VCE = 3 V, IC = 6 / 30 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Source Impedance for Minimum Noise Figure Zopt = f ( f ), VCE = 3 V, IC = 6 / 30 mA . . . . . . . . . Output Matching S22 = f ( f ), VCE = 3 V, IC = 6 / 30 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Noise Figure NFmin = f ( f ), VCE = 3 V, IC = 6 / 30 mA, ZS = Zopt . . . . . . . . . . . . . . . . . . . . . . . . . . Noise Figure NFmin = f (IC), VCE = 3 V, ZS = Zopt, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . Noise Figure NF50 = f (IC), VCE = 3 V, ZS = 50 , f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . Package Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Package Foot Print . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Marking Description (Marking BFP640ESD: T4s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tape Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 13 18 18 19 19 20 21 21 22 22 23 23 24 24 25 25 26 26 28 28 28 28
Data Sheet
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BFP640ESD
List of Tables
List of Tables
Table 1 Table 2 Table 3 Table 4 Table 5 Table 6 Table 7 Table 8 Table 9 Table 10 Table 11 Table 12 Table 13 Table 14 Table 15 Quick Reference DC Characteristics at TA = 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Quick Reference AC Characteristics at TA = 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Maximum Ratings at TA = 25C (unless otherwise specified). . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 DC Characteristics at TA = 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 General AC Characteristics at TA = 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 AC Characteristics, VCE = 3 V, f = 150 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 AC Characteristics, VCE = 3 V, f = 450 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 AC Characteristics, VCE = 3 V, f = 900 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 AC Characteristics, VCE = 3 V, f = 1.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 AC Characteristics, VCE = 3 V, f = 1.9 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 AC Characteristics, VCE = 3 V, f = 2.4 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 AC Characteristics, VCE = 3 V, f = 3.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 AC Characteristics, VCE = 3 V, f = 5.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 AC Characteristics, VCE = 3 V, f = 10 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Data Sheet
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Revision 1.0, 2010-06-29
Robust High Performance Low Noise Bipolar RF Transistor
BFP640ESD
1
* * * * * * * *
Features
Robust high performance low noise amplifier based on Infineons reliable, high volume SiGe:C wafer technology 3 2 kV ESD robustness (HBM) due to integrated protection circuits 4 High maximum RF input power of 21 dBm 0.65 dB minimum noise figure typical at 1.5 GHz, 0.7 dB at 2.4 GHz, 6 mA 26.5 dB maximum gain Gms typical at 1.5 GHz, 23 dB at 2.4 GHz, 30 mA 27 dBm OIP3 typical at 2.4 GHz, 30 mA Accurate SPICE GP model available to enable effective design in process (see chapter 6) Easy to use, Pb- and halogen free (RoHS compliant) standard package with visible leads
2 1
Applications As Low Noise Amplifier (LNA) in * * * * * Mobile, portable and fixed connectivity applications: WLAN 802.11a/b/g/n, WiMax 2.5 / 3.5 / 5GHz, UWB, Bluetooth Satellite communication systems: Navigation systems (GPS, Glonass), satellite radio (SDARs, DAB) and C-band LNB Multimedia applications such as mobile/portable TV, CATV, FM radio 3G/4G UMTS/LTE mobile phone applications ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications.
As discrete active mixer, amplifier in VCOs and buffer amplifier Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions
Product Name Package BFP640ESD Data Sheet SOT343 1=B 2=E
Pin Configuration 3=C 7 4=E
Marking T4s Revision 1.0, 2010-06-29
BFP640ESD
Product Brief
2
Product Brief
The BFP640ESD is a Silicon Germanium Carbon (SiGe:C) NPN Heterojunction wideband Bipolar RF Transistor (HBT) in a plastic dual emitter standard package with visible leads. The device is fitted with internal protection circuits, which enhance robustness against ESD and high RF input power strongly. The device combines robustness with very high RF gain and lowest noise figure at low operation current for use in a wide range of wireless applications. The BFP640ESD is especially well-suited for portable battery-powered applications in which reduced power consumption is a key requirement. Device design supports collector voltages up to 4.1 V. Table 1 Parameter Collector emitter breakdown voltage Collector base leakage current DC current gain Collector current Total power dissipation Quick Reference DC Characteristics at TA = 25C Symbol Min. Values Typ. 4.7 - 180 - - Max. - 500 270 50 200 mA mW V nA 4.1 - 110 - - Unit Note / Test Condition
V(BR)CEO ICBO hFE IC Ptot
IC = 1 mA, IB = 0 VCB = 2 V, IE = 0
Open emitter
VCE = 3 V, IC = 30 mA TS 88 C
Data Sheet
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BFP640ESD
Product Brief
Table 2 Parameter
Quick Reference AC Characteristics at TA = 25C Symbol Min. Values Typ. 46 Max. - GHz - Unit Note / Test Condition
Transition frequency
fT
VCE = 3 V, IC = 30 mA f = 1 GHz
VCE = 3 V, f = 1.5 GHz
Maximum power gain Low noise operation point High linearity operation point Transducer gain Low noise operation point High linearity operation point Minimum noise figure Minimum noise figure Associated gain Linearity 1 dB gain compression point 3rd order intercept point dB
Gms Gms S21 S21 NFmin Gass OP1dB OIP3
- - - - - - - -
23.5 26.5 21 24 0.65 23.5 12 26.5
- - dB - - dB - - dBm - - dB
IC = 6 mA IC = 30 mA ZS = ZL = 50 IC = 6 mA IC = 30 mA ZS = Zopt IC = 6 mA IC = 6 mA ZS = ZL = 50 IC = 30 mA IC = 30 mA
VCE = 3 V, f = 2.4 GHz
Maximum power gain Low noise operation point High linearity operation point Transducer gain Low noise operation point High linearity operation point Minimum noise figure Minimum noise figure Associated gain Linearity 1 dB gain compression point 3rd order intercept point
Gms Gms S21 S21 NFmin Gass OP1dB OIP3
- - - - - - - -
21 23 18 20 0.7 20 12.5 27
- - dB - - dB - - dBm - -
IC = 6 mA IC = 30 mA ZS = ZL = 50 IC = 6 mA IC = 30 mA ZS = Zopt IC = 6 mA IC = 6 mA ZS = ZL = 50 IC = 30 mA IC = 30 mA
Data Sheet
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BFP640ESD
Maximum Ratings
3
Maximum Ratings
Maximum Ratings at TA = 25C (unless otherwise specified) Symbol Min. Values Max. Open base - - 4.1 3.6 4.8 4.3 4.1 3.6 6 50 21 2 200 150 150 V V V V V V mA mA dBm kV mW C C Unit Note / Test Condition
Table 3 Parameter
Collector emitter voltage
VCEO
TA = 25 C TA = -55 C
Open emitter
Collector base voltage1)
VCBO
- -
TA = 25C TA = -55 C
Emitter / base shortened
Collector emitter voltage
2)
VCES
- -
TA = 25C TA = -55 C
- - - HBM, all pins, acc. to JESD22-A114
Base current
3)
IB IC PRFin
4)
-10 - - -2 - - -55
Collector current RF input power ESD stress pulse
VESD
5)
Total power dissipation Junction temperature Storage temperature
Ptot TJ TStg
TS 88 C
- -
1) Low VCBO due to integrated protection circuits. 2) VCES is identical to VCEO due to integrated protection circuits. 3) Sustainable reverse bias current is high due to integrated protection circuits. 4) ESD robustness is high due to integrated protection circuits.
5) TS is the soldering point temperature. TS measured on the emitter lead at the soldering point of the pcb. Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit.
Data Sheet
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BFP640ESD
Thermal Characteristics
4
Thermal Characteristics
Table 4 Parameter
Thermal Resistance Symbol Min.
1)
Values Typ. Max.
Unit
Note / Test Condition -
Junction - soldering point RthJS - 310 - K/W 1)For calculation of RthJA please refer to Application Note Thermal Resistance AN 077
250
200
Ptot [mW]
150
100
50
0
0
25
50
75 TS [C]
100
125
150
Figure 1
Total Power Dissipation Ptot = f (Ts)
Data Sheet
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BFP640ESD
Electrical Characteristics
5
5.1
Electrical Characteristics
DC Characteristics
Table 5 Parameter
DC Characteristics at TA = 25 C Symbol Min. Values Typ. 4.7 - - - 180 Max. - 500 500 10 270 V nA nA A 4.1 - - - 110 Unit Note / Test Condition
Collector emitter breakdown voltage Collector emitter leakage current Collector base leakage current Emitter base leakage current DC current gain
V(BR)CEO ICES ICBO IEBO hFE
IC = 1 mA, IB = 0
Open base
VCE = 2 V, VBE = 0
Emitter/base shortened
VCB = 2 V, IE = 0
Open emitter
VEB = 0.5 V, IC = 0
Open collector
VCE = 3 V, IC = 30 mA
Pulse measured
5.2
General AC Characteristics
Table 6 Parameter
General AC Characteristics at TA = 25 C Symbol Min. Values Typ. 46 0.08 Max. - - GHz pF - - Unit Note / Test Condition
Transition frequency Collector base capacitance
fT CCB
VCE = 3 V, IC = 30 mA, f = 1 GHz VCB = 3 V, VBE = 0 V f = 1 MHz
Emitter grounded
Collector emitter capacitance
CCE
-
0.4
-
pF
VCE = 3 V, VBE = 0 V f = 1 MHz
Base grounded
Emitter base capacitance
CEB
-
0.7
-
pF
VEB = 0.4 V, VCB = 0 V f = 1 MHz
Collector grounded
Data Sheet
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BFP640ESD
Electrical Characteristics
5.3
Frequency Dependent AC Characteristics
Measurement setup is a test fixture with Bias T's in a 50 system, TA = 25 C
VC Top View
Bias -T
OUT E C
VB B
(Pin 1)
E
Bias-T
IN
Figure 2 Table 7 Parameter
BFP640ESD Testing Circuit AC Characteristics, VCE = 3 V, f = 150 MHz Symbol Min. Values Typ. 34 39.5 25 35 0.6 30 11 25 Max. dB - - dB - - dB - - dBm - - Unit Note / Test Condition
Maximum power gain Low noise operation point High linearity operation point Transducer gain Low noise operation point High linearity operation point Minimum noise figure Minimum noise figure Associated gain Linearity 1 dB gain compression point 3rd order intercept point
Gms Gms S21 S21 NFmin Gass OP1dB OIP3
- - - - - - - -
IC = 6 mA IC = 30 mA ZS = ZL = 50 IC = 6 mA IC = 30 mA ZS = Zopt IC = 6 mA IC = 6 mA ZS = ZL = 50 IC = 30 mA IC = 30 mA
Data Sheet
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BFP640ESD
Electrical Characteristics
Table 8 Parameter
AC Characteristics, VCE = 3 V, f = 450 MHz Symbol Min. Values Typ. 29 34.5 24.5 32 0.6 28.5 11 25 Max. dB - - dB - - dB - - dBm - - Unit Note / Test Condition
Maximum power gain Low noise operation point High linearity operation point Transducer gain Low noise operation point High linearity operation point Minimum noise figure Minimum noise figure Associated gain Linearity 1 dB gain compression point 3rd order intercept point Table 9 Parameter Maximum power gain Low noise operation point High linearity operation point Transducer gain Low noise operation point High linearity operation point Minimum noise figure Minimum noise figure Associated gain Linearity 1 dB gain compression point 3rd order intercept point
Gms Gms S21 S21 NFmin Gass OP1dB OIP3
- - - - - - - -
IC = 6 mA IC = 30 mA ZS = ZL = 50 IC = 6 mA IC = 30 mA ZS = Zopt IC = 6 mA IC = 6 mA ZS = ZL = 50 IC = 30 mA IC = 30 mA
AC Characteristics, VCE = 3 V, f = 900 MHz Symbol Min. Values Typ. 26 30.5 23.5 28 0.6 26 11.5 26 Max. dB - - dB - - dB - - dBm - - Unit Note / Test Condition
Gms Gms S21 S21 NFmin Gass OP1dB OIP3
- - - - - - - -
IC = 6 mA IC = 30 mA ZS = ZL = 50 IC = 6 mA IC = 30 mA ZS = Zopt IC = 6 mA IC = 6 mA ZS = ZL = 50 IC = 30 mA IC = 30 mA
Data Sheet
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BFP640ESD
Electrical Characteristics
Table 10 Parameter
AC Characteristics, VCE = 3 V, f = 1.5 GHz Symbol Min. Values Typ. 23.5 26.5 21 24 0.65 23.5 12 26.5 Max. dB - - dB - - dB - - dBm - - Unit Note / Test Condition
Maximum power gain Low noise operation point High linearity operation point Transducer gain Low noise operation point High linearity operation point Minimum noise figure Minimum noise figure Associated gain Linearity 1 dB gain compression point 3rd order intercept point Table 11 Parameter Maximum power gain Low noise operation point High linearity operation point Transducer gain Low noise operation point High linearity operation point Minimum noise figure Minimum noise figure Associated gain Linearity 1 dB gain compression point 3rd order intercept point
Gms Gms S21 S21 NFmin Gass OP1dB OIP3
- - - - - - - -
IC = 6 mA IC = 30 mA ZS = ZL = 50 IC = 6 mA IC = 30 mA ZS = Zopt IC = 6 mA IC = 6 mA ZS = ZL = 50 IC = 30 mA IC = 30 mA
AC Characteristics, VCE = 3 V, f = 1.9 GHz Symbol Min. Values Typ. 22.5 25 19.5 22 0.65 22 12 27 Max. dB - - dB - - dB - - dBm - - Unit Note / Test Condition
Gms Gms S21 S21 NFmin Gass OP1dB OIP3
- - - - - - - -
IC = 6 mA IC = 30 mA ZS = ZL = 50 IC = 6 mA IC = 30 mA ZS = Zopt IC = 6 mA IC = 6 mA ZS = ZL = 50 IC = 30 mA IC = 30 mA
Data Sheet
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BFP640ESD
Electrical Characteristics
Table 12 Parameter
AC Characteristics, VCE = 3 V, f = 2.4 GHz Symbol Min. Values Typ. 21 23 18 20 0.7 20 12.5 27 Max. dB - - dB - - dB - - dBm - - Unit Note / Test Condition
Maximum power gain Low noise operation point High linearity operation point Transducer gain Low noise operation point High linearity operation point Minimum noise figure Minimum noise figure Associated gain Linearity 1 dB gain compression point 3rd order intercept point Table 13 Parameter Maximum power gain Low noise operation point High linearity operation point Transducer gain Low noise operation point High linearity operation point Minimum noise figure Minimum noise figure Associated gain Linearity 1 dB gain compression point 3rd order intercept point
Gms Gms S21 S21 NFmin Gass OP1dB OIP3
- - - - - - - -
IC = 6 mA IC = 30 mA ZS = ZL = 50 IC = 6 mA IC = 30 mA ZS = Zopt IC = 6 mA IC = 6 mA ZS = ZL = 50 IC = 30 mA IC = 30 mA
AC Characteristics, VCE = 3 V, f = 3.5 GHz Symbol Min. Values Typ. 19 19 15 17 0.8 16 12.5 26.5 Max. dB - - dB - - dB - - dBm - - Unit Note / Test Condition
Gma Gms S21 S21 NFmin Gass OP1dB OIP3
- - - - - - - -
IC = 6 mA IC = 30 mA ZS = ZL = 50 IC = 6 mA IC = 30 mA ZS = Zopt IC = 6 mA IC = 6 mA ZS = ZL = 50 IC = 30 mA IC = 30 mA
Data Sheet
16
Revision 1.0, 2010-06-29
BFP640ESD
Electrical Characteristics
Table 14 Parameter
AC Characteristics, VCE = 3 V, f = 5.5 GHz Symbol Min. Values Typ. 14 14.5 11 12.5 1.05 11.5 12.5 26 Max. dB - - dB - - dB - - dBm - - Unit Note / Test Condition
Maximum power gain Low noise operation point High linearity operation point Transducer gain Low noise operation point High linearity operation point Minimum noise figure Minimum noise figure Associated gain Linearity 1 dB gain compression point 3rd order intercept point Table 15 Parameter Maximum power gain Low noise operation point High linearity operation point Transducer gain Low noise operation point High linearity operation point Minimum noise figure Minimum noise figure Associated gain Linearity 1 dB gain compression point 3rd order intercept point Note:
Gma Gma S21 S21 NFmin Gass OP1dB OIP3
- - - - - - - -
IC = 6 mA IC = 30 mA ZS = ZL = 50 IC = 6 mA IC = 30 mA ZS = Zopt IC = 6 mA IC = 6 mA ZS = ZL = 50 IC = 30 mA IC = 30 mA
AC Characteristics, VCE = 3 V, f = 10 GHz Symbol Min. Values Typ. 10 10.5 4.5 6 2 7 11 25.5 Max. dB - - dB - - dB - - dBm - - Unit Note / Test Condition
Gms Gms S21 S21 NFmin Gass OP1dB OIP3
- - - - - - - -
IC = 6 mA IC = 30 mA ZS = ZL = 50 IC = 6 mA IC = 30 mA ZS = Zopt IC = 6 mA IC = 6 mA ZS = ZL = 50 IC = 30 mA IC = 30 mA
1. Gms = IS21 / S12I for k < 1; Gma = IS21 / S12I(k-(k2-1)1/2) for k > 1 2. In order to get the NFmin values stated in this chapter the test fixture losses have been subtracted from all measured result 3. OIP33 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 from 0.2 MHz to 12 GHz.
Data Sheet
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BFP640ESD
Electrical Characteristics
5.4
Characteristic DC Diagrams
60 50 40 IC [mA] 30 20 10 IB=25A 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VCE[V]
Figure 3 Collector Current vs. Collector Emitter Voltage IC = f (VCE), IB = Parameter
IB=325A IB=275A IB=225A IB=175A IB=125A IB=75A
1000
hFE 100 0.1 1 IC [mA] 10 100
Figure 4
DC Current Gain hFE = f (IC), VCE = 3 V
Data Sheet
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BFP640ESD
Electrical Characteristics
100 10 1 IC [mA] 0.1 0.01 0.001 0.0001 0.00001 0.4 0.5 0.6 VBE [V] 0.7 0.8 0.9
Figure 5
Collector Current vs. Base Emitter Voltage IC = f (VBE), VCE = 2 V
1 0.1 0.01 IB [mA] 0.001 0.0001 0.00001 0.000001 0.4 0.5 0.6 VBE [V] 0.7 0.8 0.9
Figure 6
Base Current vs. Base Emitter Forward Voltage IB = f (VBE), VCE = 2 V
Data Sheet
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BFP640ESD
Electrical Characteristics
1.E-04 1.E-05 1.E-06 IB [A] 1.E-07 1.E-08 1.E-09 1.E-10 0.2 0.3 0.4 VEB [V] 0.5 0.6
Figure 7
Base Current vs. Base Emitter Reverse Voltage IB = f (VEB), VCE = 2 V
Data Sheet
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BFP640ESD
Electrical Characteristics
5.5
Characteristic AC Diagrams
50 45 40 35 fT [GHz] 30 25 20 15 10 5 0 0 10 20 30 IC [mA] 40 1.00V 50 60 2.00V 4.00V 3.00V 2.50V
Figure 8
Transition Frequency fT = f (IC), f = 1 GHz, VCE = Parameter
30 25 20 OIP3 [dBm] 15 10 5 0 -5 2V, 1.5GHz 3V, 1.5GHz 2V, 2.4GHz 3V, 2.4GHz
0
10
20 IC [mA]
30
40
50
Figure 9
3rd Order Intercept Point OIP3 = f (IC), ZS = ZL= 50 , VCE, f = Parameters
Data Sheet
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BFP640ESD
Electrical Characteristics
0.2 0.18 0.16 0.14 [pF] C 0.12 0.1
cb
0.08 0.06 0.04 0.02 0 0 0.5 1 1.5 2 VCB [V] 2.5 3 3.5 4
Figure 10
Collector Base Capacitance CCB = f (VCB), f = 1 MHz
50 45 40 35 30 G [dB] 25 20 15 10 5 0 0 1 2 3 4 5 6 f [GHz] 7 8 9 10 |S21|
2
Gms
Gma G
ms
Figure 11
Gain Gma, Gms, IS21I = f (f), VCE = 3 V, IC = 30 mA
Data Sheet
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BFP640ESD
Electrical Characteristics
42 39 36 33 30 27 G [dB] 24 21 18 15 12 9 6 3 0 0 10 20 30 IC [mA] 40
0.15GHz 0.45GHz 0.90GHz 1.50GHz 1.90GHz 2.40GHz 3.50GHz 5.50GHz 10.00GHz
50
60
Figure 12
Maximum Power Gain Gmax = f (IC), VCE = 3 V, f = Parameter in GHz
42 39 36 33 30 27 G [dB] 24 21 18 15 12 9 6 3 0 0 1 2 VCE [V]
Figure 13 Maximum Power Gain Gmax = f (VCE), IC = 30 mA, f = Parameter in GHz
0.15GHz 0.45GHz 0.90GHz 1.50GHz 1.90GHz 2.40GHz 3.50GHz 5.50GHz 10.00GHz
3
4
5
Data Sheet
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BFP640ESD
Electrical Characteristics
1 1.5 0.5 0.4
8 9 9 8 7 7 6 5 5 4 0.1 4 0.2 0.3 0.4 0.5 3 2 1 1.5 6 10 10
2 3 4 5
0.3 0.2 0.1 0 -0.1 -0.2
0.03 to 10 GHz
2 3 45
10
3
1
-10 -5 -4
1
2
-0.3 -0.4 -0.5 -1.5 -1
-3 -2
30 mA 6 mA
Figure 14
Input Matching S11 = f ( f ), VCE = 3 V, IC = 6 / 30 mA
1 1.5 0.5 0.4 0.3 0.2 0.1 0 -0.1 -0.2 -0.3 -0.4 -0.5 -1.5 -1 2 3
1.9GHz
0.9GHz
4 5
2.4GHz
0.1 0.2 0.3 0.4 0.5 1 1.5 2 3
0.45GHz
45
10
I = 30mA c 5.5GHz
Ic = 6.0mA
-10 -5 -4
-3
10GHz
-2
Figure 15
Source Impedance for Minimum Noise Figure Zopt = f ( f ), VCE = 3 V, IC = 6 / 30 mA
Data Sheet
24
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BFP640ESD
Electrical Characteristics
1 1.5 0.5 0.4 0.3 0.2 0.1
8 10 9 8 0.1 0.2 0.3 0.4 0.5 7 6 7 1 6 5 4 5 4 3 2 1 3 2 1 1.5 10
2 3 4 5
9
0.03 to 10 GHz
2 3 45
10
0 -0.1 -0.2
-10 -5 -4 -3
-0.3 -0.4 -0.5 -1.5 -1
-2
30 mA 6 mA
Figure 16
Output Matching S22 = f ( f ), VCE = 3 V, IC = 6 / 30 mA
2 1.8 1.6 1.4 NFmin [dB] 1.2 1 0.8 0.6 0.4 0.2 0 0 2 4 f [GHz]
Figure 17 Noise Figure NFmin = f ( f ), VCE = 3 V, IC = 6 / 30 mA, ZS = Zopt
I = 30mA C IC = 6.0mA
6
8
10
Data Sheet
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BFP640ESD
Electrical Characteristics
4 3.5 3 2.5 2 1.5 1 0.5 0 f = 10GHz f = 5.5GHz f = 2.4GHz f = 1.9GHz f = 0.9GHz f = 0.45GHz 0 10 20 Ic [mA]
Figure 18 Noise Figure NFmin = f (IC), VCE = 3 V, ZS = Zopt, f = Parameter in GHz
NFmin [dB]
30
40
50
5 4.5 4 3.5 NF50 [dB] 3 2.5 2 1.5 1 0.5 0 0 10 20 Ic [mA]
Figure 19 Noise Figure NF50 = f (IC), VCE = 3 V, ZS = 50 , f = Parameter in GHz
f = 10GHz f = 5.5GHz f = 2.4GHz f = 1.9GHz f = 0.9GHz f = 0.45GHz 30 40 50
Note: The curves shown in this chapter have been generated using typical devices but shall not be considered as a guarantee that all devices have identical characteristic curves. TA = 25C. Data Sheet 26 Revision 1.0, 2010-06-29
BFP640ESD
Simulation Data
6
Simulation Data
For the SPICE Gummel Poon (GP) model as well as for the S-parameters (including noise parameters) please refer to our internet website: www.infineon.com/rf.models. Please consult our website and download the latest versions before actually starting your design. You find the BFP640ESD SPICE GP model in the internet in MWO- and ADS-format, which you can import into these circuit simulation tools very quickly and conveniently. The model already contains the package parasitics and is ready to use for DC- and high frequency simulations. The terminals of the model circuit correspond to the pin configuration of the device. The model parameters have been extracted and verified up to 10 GHz using typical devices. The BFP640ESD SPICE GP model reflects the typical DC- and RF-performance within the limitations which are given by the SPICE GP model itself. Besides the DC characteristics all S-parameters in magnitude and phase, as well as noise figure (including optimum source impedance, equivalent noise resistance and flicker noise) and intermodulation have been extracted.
Data Sheet
27
Revision 1.0, 2010-06-29
BFP640ESD
Package Information SOT343
7
Package Information SOT343
0.9 0.1 2 0.2 1.3 4 3 0.15 1 0.3 +0.1 -0.05 4x 0.1 M 0.6 +0.1 -0.05 0.2 M A
SOT343-PO V08
0.1 MAX. 0.1 A
1.25 0.1 2.1 0.1
2
0.1 MIN.
0.15 -0.05
+0.1
Figure 20
Package Outline
0.6
0.8
1.15 0.9
SOT343-FP V08
Figure 21
Package Foot Print
XY s
Pin 1
96
Figure 22
Marking Description (Marking BFP640ESD: T4s)
1.6
Manufacturer 2009 June , Date Code(YM) Marking
4
0.2
Pin 1
2.15
2.3
8
1.1
SOT323-TP V02
Figure 23
Tape Dimensions
Data Sheet
28
Revision 1.0, 2010-06-29
www.infineon.com
Published by Infineon Technologies AG

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